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Home / Product Catalog / Transistors - FETs, MOSFETs - Single / IPB097N08N3 G

IPB097N08N3 G

IPB097N08N3 G

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Part Number IPB097N08N3 G
Manufacturer Infineon Technologies
Description MOSFET N-CH 80V 70A TO263-3
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In Stock 390,000 piece(s)
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Lead Time Can Ship Immediately
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Part Number # IPB097N08N3 G (Tantalum Capacitors) is manufactured by Infineon Technologies. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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IPB097N08N3 G Specifications
ManufacturerInfineon Technologies
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
PackageTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SeriesOptiMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs(th) (Max) @ Id3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2410pF @ 40V
Vgs (Max)±20V
FET Feature-
Power Dissipation (Max)100W (Tc)
Rds On (Max) @ Id, Vgs9.7 mOhm @ 46A, 10V
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-2
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Part Number Manufacturer Description Stock

IPB097N08N3 G

 Infineon Technologies

MOSFET N-CH 80V 70A TO263-3

 390,000

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