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Home / Product Catalog / Transistors - FETs, MOSFETs - Single / SI3812DV-T1-GE3

SI3812DV-T1-GE3

SI3812DV-T1-GE3

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Part Number SI3812DV-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 20V 2A 6-TSOP
Package SOT-23-6 Thin, TSOT-23-6
In Stock 394,692 piece(s)
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Lead Time Can Ship Immediately
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Part Number # SI3812DV-T1-GE3 (Tantalum Capacitors) is manufactured by Vishay Siliconix. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

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SI3812DV-T1-GE3 Specifications
ManufacturerVishay Siliconix
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
PackageSOT-23-6 Thin, TSOT-23-6
SeriesLITTLE FOOT?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Vgs (Max)±12V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)830mW (Ta)
Rds On (Max) @ Id, Vgs125 mOhm @ 2.4A, 4.5V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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Part Number Manufacturer Description Stock

SI3812DV-T1-GE3

 Vishay Siliconix

MOSFET N-CH 20V 2A 6-TSOP

 394,692

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