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Home / Product Catalog / Transistors - FETs, MOSFETs - Single / TPC6006-H(TE85L,F)

TPC6006-H(TE85L,F)

TPC6006-H(TE85L,F)

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Part Number TPC6006-H(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 40V 3.9A VS6 2-3T1A
Package SOT-23-6 Thin, TSOT-23-6
In Stock 3,712 piece(s)
Unit Price Request a Quote
Lead Time Can Ship Immediately
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Part Number # TPC6006-H(TE85L,F) (Tantalum Capacitors) is manufactured by Toshiba Semiconductor and Storage. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.

For TPC6006-H(TE85L,F) specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add TPC6006-H(TE85L,F) with quantity into BOM. global-skychips.com does NOT require any registration to request a quote of TPC6006-H(TE85L,F).

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TPC6006-H(TE85L,F) Specifications
ManufacturerToshiba Semiconductor and Storage
CategoryDiscrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
PackageSOT-23-6 Thin, TSOT-23-6
SeriesU-MOSIII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds251pF @ 10V
Vgs (Max)±20V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Rds On (Max) @ Id, Vgs75 mOhm @ 1.9A, 10V
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageVS-6 (2.9x2.8)
Package / CaseSOT-23-6 Thin, TSOT-23-6

TPC6006-H(TE85L,F) Guarantees

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Part Number Manufacturer Description Stock

TPC6006-H(TE85L,F)

 Toshiba Semiconductor and Storage

MOSFET N-CH 40V 3.9A VS6 2-3T1A

 3,712

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