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Image | Part Number | Manufacturer | Description | Package | Stock | Quantity |
---|---|---|---|---|---|---|
IDL06G65C5XUMA1 | Infineon Technologies | DIODE SCHOTTKY 650V 6A VSON-4 | 4-PowerTSFN | 7,568 |
|
|
IRD3CH5BD6 | Infineon Technologies | DIODE CHIP EMITTER CONTROLLED | - | 3,328 |
|
|
IRD3CH31DD6 | Infineon Technologies | DIODE CHIP EMITTER CONTROLLED | - | 4,960 |
|
|
IRD3CH11DF6 | Infineon Technologies | DIODE CHIP EMITTER CONTROLLED | - | 6,896 |
|
|
IDW15S120FKSA1 | Infineon Technologies | DIODE SCHOTTKY 1200V 15A TO247-3 | TO-247-3 | 2,896 |
|
|
IRD3CH5DB6 | Infineon Technologies | DIODE GEN PURP 1.2KV 5A DIE | Die | 6,144 |
|
|
IRD3CH31DF6 | Infineon Technologies | DIODE CHIP EMITTER CONTROLLED | - | 7,440 |
|
|
IRD3CH16DB6 | Infineon Technologies | DIODE CHIP EMITTER CONTROLLED | - | 4,976 |
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|
IRD3CH82DB6 | Infineon Technologies | DIODE GEN PURP 1.2KV 150A DIE | Die | 6,000 |
|
|
IDC04S60CEX1SA1 | Infineon Technologies | DIODE SIC 600V 4A SAWN WAFER | Die | 2,544 |
|
|
IRD3CH42DB6 | Infineon Technologies | DIODE GEN PURP 1.2KV 75A DIE | Die | 5,136 |
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|
IDC04S60CEX7SA1 | Infineon Technologies | DIODE GEN PURPOSE SAWN WAFER | - | 6,528 |
|
|
IRD3CH82DD6 | Infineon Technologies | DIODE CHIP EMITTER CONTROLLED | - | 2,896 |
|
|
IRD3CH42DD6 | Infineon Technologies | DIODE CHIP EMITTER CONTROLLED | - | 3,328 |
|
|
IRD3CH82DF6 | Infineon Technologies | DIODE CHIP EMITTER CONTROLLED | - | 3,344 |
|
|
IDC05S60CEX1SA1 | Infineon Technologies | DIODE SIC 600V 5A SAWN WAFER | Die | 2,736 |
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|
IDC08S60CEX1SA2 | Infineon Technologies | DIODE SIC 600V 8A SAWN WAFER | Die | 5,568 |
|
|
IRD3CH9DB6 | Infineon Technologies | DIODE GEN PURP 1.2KV 10A DIE | Die | 2,336 |
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|
IDC08S60CEX1SA3 | Infineon Technologies | DIODE SIC 600V 8A SAWN WAFER | Die | 3,536 |
|
|
IDC08S60CEX7SA1 | Infineon Technologies | DIODE GEN PURPOSE SAWN WAFER | - | 4,832 |
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